Name: IXYS IXTU50N085T
Brand: IXYS
SKU: IXTU50N085T
Availability: InStock

Specifications
Product Details - IXTU50N085T

IXTU50N085T Tech Specifications
IXYS - IXTU50N085T technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTU50N085T

Manufacturer IXYS / Littelfuse

Vgs(th) (Max) @ Id 4V @ 25µA

Technology MOSFET (Metal Oxide)

Supplier Device Package TO-251AA

Series Trench

Rds On (Max) @ Id, Vgs -

Power Dissipation (Max) -

Package / Case TO-251-3 Short Leads, IPak, TO-251AA

Package Tube

Operating Temperature -

Mounting Type Through Hole

FET Type N-Channel

FET Feature -

Drain to Source Voltage (Vdss) 85 V

Current - Continuous Drain (Id) @ 25°C 50A (Tc)

Base Product Number IXTU50
TheIXTU50N085Tis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 85V 50A TO251 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4V @ 25µA and Technology of MOSFET (Metal Oxide). Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTU50N085T or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute
Part Number	IXTU50N085T	IXTV02N250S	IXTU02N50D	IXTV102N20T
Manufacturer	IXYS	IXYS	IXYS	IXYS
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	85 V	2500 V	500 V	200 V
Series	Trench	-	Depletion	TrenchHV™
Current - Continuous Drain (Id) @ 25°C	50A (Tc)	200mA (Tc)	200mA (Tc)	102A (Tc)
Base Product Number	IXTU50	IXTV02	IXTU02	IXTV102
Power Dissipation (Max)	-	83W (Tc)	1.1W (Ta), 25W (Tc)	750W (Tc)
Rds On (Max) @ Id, Vgs	-	450Ohm @ 50mA, 10V	30Ohm @ 50mA, 0V	23mOhm @ 500mA, 10V
Supplier Device Package	TO-251AA	PLUS-220SMD	TO-251AA	PLUS220
Vgs(th) (Max) @ Id	4V @ 25µA	4.5V @ 250µA	5V @ 25µA	4.5V @ 1mA
Operating Temperature	-	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 175°C (TJ)
Package	Tube	Tube	Tube	Tube
FET Feature	-	-	Depletion Mode	-
Mounting Type	Through Hole	Surface Mount	Through Hole	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA	PLUS-220SMD	TO-251-3 Short Leads, IPak, TO-251AA	TO-220-3, Short Tab

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IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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