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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTX90N25L2
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IXTX90N25L2IXYS MOSFET N-CH 250V 90A PLUS247-3
Part NumberIXTX90N25L2
PackageTO-247-3 Variant
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTX90N25L2
DescriptionMOSFET N-CH 250V 90A PLUS247-3
In stock32136
Data sheet
IXTX90N25L2.pdf
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  • Specifications
  • Product Details - IXTX90N25L2
  • IXTX90N25L2 Tech Specifications
    IXYS - IXTX90N25L2 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTX90N25L2
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4.5V @ 3mA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package PLUS247™-3
    Series Linear L2™
    Rds On (Max) @ Id, Vgs 33mOhm @ 45A, 10V
    Power Dissipation (Max) 960W (Tc)
    Package / Case TO-247-3 Variant
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 23000 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 640 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 250 V
    Current - Continuous Drain (Id) @ 25°C 90A (Tc)
    Base Product Number IXTX90
  • TheIXTX90N25L2is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 250V 90A PLUS247-3 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4.5V @ 3mA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTX90N25L2 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTX90N25L2 IXTX40P50P IXTX600N04T2 IXTX6N200P3HV
Part Number IXTX90N25L2 IXTX40P50P IXTX600N04T2 IXTX6N200P3HV
Manufacturer IXYS IXYS IXYS IXYS
Gate Charge (Qg) (Max) @ Vgs 640 nC @ 10 V 205 nC @ 10 V 590 nC @ 10 V 143 nC @ 10 V
Vgs(th) (Max) @ Id 4.5V @ 3mA 4V @ 1mA 3.5V @ 250µA 5V @ 250µA
Package / Case TO-247-3 Variant TO-247-3 Variant TO-247-3 Variant TO-247-3 Variant
Series Linear L2™ PolarP™ TrenchT2™ Polar P3™
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 23000 pF @ 25 V 11500 pF @ 25 V 40000 pF @ 25 V 3700 pF @ 25 V
FET Feature - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package PLUS247™-3 PLUS247™-3 PLUS247™-3 TO-247PLUS-HV
Base Product Number IXTX90 IXTX40 IXTX600 IXTX6
Rds On (Max) @ Id, Vgs 33mOhm @ 45A, 10V 230mOhm @ 20A, 10V 1.5mOhm @ 100A, 10V 4Ohm @ 3A, 10V
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 500 V 40 V 2000 V
Power Dissipation (Max) 960W (Tc) 890W (Tc) 1250W (Tc) 960W (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Package Tube Tube Tube Tube
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 40A (Tc) 600A (Tc) 6A (Tc)
FET Type N-Channel P-Channel N-Channel N-Channel
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
  • IXYS Related Products
  • IXTX90N25L2 Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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