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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTY01N100D
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IXTY01N100DIXYS MOSFET N-CH 1000V 400MA TO252AA
Part NumberIXTY01N100D
PackageTO-252-3, DPak (2 Leads + Tab), SC-63
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTY01N100D
DescriptionMOSFET N-CH 1000V 400MA TO252AA
In stock15719
Data sheet
IXTY01N100D.pdf
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  • Specifications
  • Product Details - IXTY01N100D
  • IXTY01N100D Tech Specifications
    IXYS - IXTY01N100D technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTY01N100D
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4.5V @ 25µA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-252AA
    Series Depletion
    Rds On (Max) @ Id, Vgs 80Ohm @ 50mA, 0V
    Power Dissipation (Max) 1.1W (Ta), 25W (Tc)
    Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Surface Mount
    Input Capacitance (Ciss) (Max) @ Vds 100 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 5.8 nC @ 5 V
    FET Type N-Channel
    FET Feature Depletion Mode
    Drive Voltage (Max Rds On, Min Rds On) 0V
    Drain to Source Voltage (Vdss) 1000 V
    Current - Continuous Drain (Id) @ 25°C 400mA (Tc)
    Base Product Number IXTY01
  • TheIXTY01N100Dis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 1000V 400MA TO252AA and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4.5V @ 25µA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTY01N100D or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTY01N100D IXTX60N50L2 IXTX660N04T4 IXTY02N120P-TRL
Part Number IXTY01N100D IXTX60N50L2 IXTX660N04T4 IXTY02N120P-TRL
Manufacturer IXYS IXYS IXYS IXYS
Drive Voltage (Max Rds On, Min Rds On) 0V 10V - 10V
Supplier Device Package TO-252AA PLUS247™-3 PLUS247™-3 TO-252AA
Base Product Number IXTY01 IXTX60 IXTX660 IXTY02
FET Type N-Channel N-Channel - N-Channel
Drain to Source Voltage (Vdss) 1000 V 500 V - 1200 V
Vgs(th) (Max) @ Id 4.5V @ 25µA 4.5V @ 250µA - 4V @ 100µA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-247-3 Variant TO-247-3 Variant TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Power Dissipation (Max) 1.1W (Ta), 25W (Tc) 960W (Tc) - 33W (Tc)
Mounting Type Surface Mount Through Hole Through Hole Surface Mount
Vgs (Max) ±20V ±30V - ±20V
FET Feature Depletion Mode - - -
Series Depletion Linear L2™ Trench Polar
Rds On (Max) @ Id, Vgs 80Ohm @ 50mA, 0V 100mOhm @ 30A, 10V - 75Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs 5.8 nC @ 5 V 610 nC @ 10 V - 4.7 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C 400mA (Tc) 60A (Tc) - 200mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds 100 pF @ 25 V 24000 pF @ 25 V - 104 pF @ 25 V
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Package Tube Tube Tube Tape & Reel (TR)
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  • IXTY01N100D Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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