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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTY08N100D2-TRL
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IXTY08N100D2-TRLIXYS MOSFET N-CH 1000V 800MA TO252
Part NumberIXTY08N100D2-TRL
PackageTO-252-3, DPak (2 Leads + Tab), SC-63
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTY08N100D2-TRL
DescriptionMOSFET N-CH 1000V 800MA TO252
In stock13462
Data sheet
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  • Specifications
  • Product Details - IXTY08N100D2-TRL
  • IXTY08N100D2-TRL Tech Specifications
    IXYS - IXTY08N100D2-TRL technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTY08N100D2-TRL
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4V @ 25µA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-252AA
    Series Depletion
    Rds On (Max) @ Id, Vgs 21Ohm @ 400mA, 0V
    Power Dissipation (Max) 60W (Tc)
    Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
    Package Tape & Reel (TR)
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Surface Mount
    Input Capacitance (Ciss) (Max) @ Vds 325 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 14.6 nC @ 5 V
    FET Type N-Channel
    FET Feature Depletion Mode
    Drive Voltage (Max Rds On, Min Rds On) 0V
    Drain to Source Voltage (Vdss) 1000 V
    Current - Continuous Drain (Id) @ 25°C 800mA (Tj)
    Base Product Number IXTY08
  • TheIXTY08N100D2-TRLis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 1000V 800MA TO252 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4V @ 25µA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTY08N100D2-TRL or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTY08N100D2-TRL IXTY12N06T IXTY15N20T IXTY01N100D-TRL
Part Number IXTY08N100D2-TRL IXTY12N06T IXTY15N20T IXTY01N100D-TRL
Manufacturer IXYS IXYS IXYS IXYS
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) - -55°C ~ 150°C (TJ)
FET Feature Depletion Mode - - Depletion Mode
Package Tape & Reel (TR) Tube Tube Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On) 0V 10V - 0V
Drain to Source Voltage (Vdss) 1000 V 60 V 200 V 1000 V
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (Max) ±20V ±20V - ±20V
Current - Continuous Drain (Id) @ 25°C 800mA (Tj) 12A (Tc) 15A (Tc) 400mA (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Vgs(th) (Max) @ Id 4V @ 25µA 4V @ 25µA - 4.5V @ 25µA
Series Depletion TrenchMV™ Trench Depletion
FET Type N-Channel N-Channel N-Channel N-Channel
Supplier Device Package TO-252AA TO-252AA TO-252AA TO-252AA
Input Capacitance (Ciss) (Max) @ Vds 325 pF @ 25 V 256 pF @ 25 V - 100 pF @ 25 V
Base Product Number IXTY08 IXTY12 IXTY15 IXTY01
Rds On (Max) @ Id, Vgs 21Ohm @ 400mA, 0V 85mOhm @ 6A, 10V - 80Ohm @ 50mA, 0V
Gate Charge (Qg) (Max) @ Vgs 14.6 nC @ 5 V 3.4 nC @ 10 V - 5.8 nC @ 5 V
Power Dissipation (Max) 60W (Tc) 33W (Tc) - 1.1W (Ta), 25W (Tc)
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  • IXTY08N100D2-TRL Download Datasheets (0)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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