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IXTY12N06TIXYS MOSFET N-CH 60V 12A TO252
Part NumberIXTY12N06T
PackageTO-252-3, DPak (2 Leads + Tab), SC-63
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTY12N06T
DescriptionMOSFET N-CH 60V 12A TO252
In stock2946
Data sheet
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  • Specifications
  • Product Details - IXTY12N06T
  • IXTY12N06T Tech Specifications
    IXYS - IXTY12N06T technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTY12N06T
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4V @ 25µA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-252AA
    Series TrenchMV™
    Rds On (Max) @ Id, Vgs 85mOhm @ 6A, 10V
    Power Dissipation (Max) 33W (Tc)
    Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
    Package Tube
    Operating Temperature -55°C ~ 175°C (TJ)
    Mounting Type Surface Mount
    Input Capacitance (Ciss) (Max) @ Vds 256 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 3.4 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 60 V
    Current - Continuous Drain (Id) @ 25°C 12A (Tc)
    Base Product Number IXTY12
  • TheIXTY12N06Tis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 60V 12A TO252 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4V @ 25µA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTY12N06T or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTY12N06T IXTY08N120P IXTY18P10T-TRL IXTY08N100D2-TRL
Part Number IXTY12N06T IXTY08N120P IXTY18P10T-TRL IXTY08N100D2-TRL
Manufacturer IXYS IXYS IXYS IXYS
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 8A (Tc) 18A (Tc) 800mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V 0V
Power Dissipation (Max) 33W (Tc) - 83W (Tc) 60W (Tc)
Vgs (Max) ±20V - ±15V ±20V
Vgs(th) (Max) @ Id 4V @ 25µA - 4.5V @ 250µA 4V @ 25µA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220-3 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Series TrenchMV™ Polar TrenchP™ Depletion
FET Feature - - - Depletion Mode
FET Type N-Channel N-Channel P-Channel N-Channel
Supplier Device Package TO-252AA TO-220-3 TO-252AA TO-252AA
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Package Tube Tube Tape & Reel (TR) Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds 256 pF @ 25 V - 2100 pF @ 25 V 325 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 3.4 nC @ 10 V - 39 nC @ 10 V 14.6 nC @ 5 V
Operating Temperature -55°C ~ 175°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Through Hole Surface Mount Surface Mount
Base Product Number IXTY12 IXTY08 IXTY18 IXTY08
Rds On (Max) @ Id, Vgs 85mOhm @ 6A, 10V - 120mOhm @ 9A, 10V 21Ohm @ 400mA, 0V
Drain to Source Voltage (Vdss) 60 V 1200 V 100 V 1000 V
Payment Support The payment method can be chosen from the methods shown below: Wire Transfer (T/T, Bank Transfer), Western Union, Credit card, PayPal.
Certifications & Memberships We strictly controls the quality of products, environment and services.Through the ISO certification of the third party. View More >

Brand introduction

IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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