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HomeProductsDiscrete Semiconductor ProductsTransistors - IGBTs - SingleIXXH80N65B4H1
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IXXH80N65B4H1IXYS IGBT 650V 160A 625W TO247AD
Part NumberIXXH80N65B4H1
PackageTO-247-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXXH80N65B4H1
DescriptionIGBT 650V 160A 625W TO247AD
In stock2808
Data sheet
IXXH80N65B4H1.pdf
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  • Specifications
  • Product Details - IXXH80N65B4H1
  • IXXH80N65B4H1 Tech Specifications
    IXYS - IXXH80N65B4H1 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXXH80N65B4H1
    Manufacturer IXYS / Littelfuse
    Voltage - Collector Emitter Breakdown (Max) 650 V
    Vce(on) (Max) @ Vge, Ic 2V @ 15V, 80A
    Test Condition 400V, 80A, 3Ohm, 15V
    Td (on/off) @ 25°C 38ns/120ns
    Switching Energy 3.77mJ (on), 1.2mJ (off)
    Supplier Device Package TO-247AD (IXXH)
    Series GenX4™, XPT™
    Reverse Recovery Time (trr) 150 ns
    Power - Max 625 W
    Package / Case TO-247-3
    Package Tube
    Operating Temperature -55°C ~ 175°C (TJ)
    Mounting Type Through Hole
    Input Type Standard
    IGBT Type PT
    Gate Charge 120 nC
    Current - Collector Pulsed (Icm) 430 A
    Current - Collector (Ic) (Max) 160 A
    Base Product Number IXXH80
  • TheIXXH80N65B4H1is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is IGBT 650V 160A 625W TO247AD and it falls under the category of Transistors - IGBTs - Single, with Manufacturer of IXYS / Littelfuse and Voltage - Collector Emitter Breakdown (Max) of 650 V and Vce(on) (Max) @ Vge, Ic of 2V @ 15V, 80A. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXXH80N65B4H1 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXXH80N65B4H1 IXXH80N65B4D1 IXXH75N60C3 IXXH60N65B4H1
Part Number IXXH80N65B4H1 IXXH80N65B4D1 IXXH75N60C3 IXXH60N65B4H1
Manufacturer IXYS IXYS IXYS IXYS
Reverse Recovery Time (trr) 150 ns 100 ns - 150 ns
Switching Energy 3.77mJ (on), 1.2mJ (off) 3.36mJ (on), 1.83mJ (off) 1.6mJ (on), 800µJ (off) 3.13mJ (on), 1.15mJ (off)
Gate Charge 120 nC 120 nC 107 nC 95 nC
Current - Collector Pulsed (Icm) 430 A 430 A 300 A 230 A
Current - Collector (Ic) (Max) 160 A 180 A 150 A 116 A
Input Type Standard Standard Standard Standard
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V 600 V 650 V
Power - Max 625 W 625 W 750 W 380 W
Series GenX4™, XPT™ XPT™, GenX4™ GenX3™, XPT™ GenX4™, XPT™
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 80A 2.1V @ 15V, 80A 2.3V @ 15V, 60A 2V @ 15V, 60A
Supplier Device Package TO-247AD (IXXH) TO-247AD (IXXH) TO-247AD (IXXH) TO-247AD (IXXH)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Test Condition 400V, 80A, 3Ohm, 15V 400V, 80A, 3Ohm, 15V 400V, 60A, 5Ohm, 15V 400V, 60A, 5Ohm, 15V
IGBT Type PT PT PT PT
Base Product Number IXXH80 IXXH80 IXXH75 IXXH60
Td (on/off) @ 25°C 38ns/120ns 26ns/112ns 35ns/90ns 37ns/145ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) - -55°C ~ 175°C (TJ)
Package Tube Tube Tube Tube
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  • IXXH80N65B4H1 Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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