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HomeProductsDiscrete Semiconductor ProductsTransistors - IGBTs - SingleIXXP12N65B4D1
IXXP12N65B4D1 Image Image may be representation.
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IXXP12N65B4D1IXYS IGBT
Part NumberIXXP12N65B4D1
PackageTO-220-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXXP12N65B4D1
DescriptionIGBT
In stock2925
Data sheet
IXXP12N65B4D1.pdf
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  • Specifications
  • Product Details - IXXP12N65B4D1
  • IXXP12N65B4D1 Tech Specifications
    IXYS - IXXP12N65B4D1 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXXP12N65B4D1
    Manufacturer IXYS / Littelfuse
    Voltage - Collector Emitter Breakdown (Max) 650 V
    Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 12A
    Test Condition 400V, 12A, 20Ohm, 15V
    Td (on/off) @ 25°C 13ns/158ns
    Switching Energy 440µJ (on), 220µJ (off)
    Supplier Device Package TO-220-3
    Series XPT™, GenX4™
    Reverse Recovery Time (trr) 43 ns
    Power - Max 160 W
    Package / Case TO-220-3
    Package Tube
    Operating Temperature -55°C ~ 175°C (TJ)
    Mounting Type Through Hole
    Input Type Standard
    IGBT Type -
    Gate Charge 34 nC
    Current - Collector Pulsed (Icm) 70 A
    Current - Collector (Ic) (Max) 38 A
    Base Product Number IXXP12
  • TheIXXP12N65B4D1is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is IGBT and it falls under the category of Transistors - IGBTs - Single, with Manufacturer of IXYS / Littelfuse and Voltage - Collector Emitter Breakdown (Max) of 650 V and Vce(on) (Max) @ Vge, Ic of 1.95V @ 15V, 12A. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXXP12N65B4D1 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXXP12N65B4D1 IXXK300N60B3 IXXT100N75B4HV IXXX100N60C3H1
Part Number IXXP12N65B4D1 IXXK300N60B3 IXXT100N75B4HV IXXX100N60C3H1
Manufacturer IXYS IXYS IXYS IXYS
Voltage - Collector Emitter Breakdown (Max) 650 V 600 V - 600 V
Mounting Type Through Hole Through Hole - Through Hole
Package Tube Tube Tube Tube
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) - -
Package / Case TO-220-3 TO-264-3, TO-264AA - TO-247-3 Variant
Reverse Recovery Time (trr) 43 ns - - 140 ns
Base Product Number IXXP12 IXXK300 - IXXX100
Gate Charge 34 nC 460 nC - 150 nC
IGBT Type - PT - PT
Supplier Device Package TO-220-3 TO-264 (IXXK) - PLUS247™-3
Current - Collector Pulsed (Icm) 70 A 1140 A - 340 A
Power - Max 160 W 2300 W - 695 W
Td (on/off) @ 25°C 13ns/158ns 50ns/190ns - 30ns/90ns
Current - Collector (Ic) (Max) 38 A 550 A - 170 A
Input Type Standard Standard - Standard
Series XPT™, GenX4™ GenX3™, XPT™ - GenX3™, XPT™
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 12A 1.6V @ 15V, 100A - 2.2V @ 15V, 70A
Test Condition 400V, 12A, 20Ohm, 15V 400V, 100A, 1Ohm, 15V - 360V, 70A, 2Ohm, 15V
Switching Energy 440µJ (on), 220µJ (off) 3.45mJ (on), 2.86mJ (off) - 2mJ (on), 950µJ (off)
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  • IXXP12N65B4D1 Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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