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IXXX140N65B4H1IXYS IGBT
Part NumberIXXX140N65B4H1
PackageTO-247-3 Variant
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXXX140N65B4H1
DescriptionIGBT
In stock26995
Data sheet
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  • Specifications
  • Product Details - IXXX140N65B4H1
  • IXXX140N65B4H1 Tech Specifications
    IXYS - IXXX140N65B4H1 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXXX140N65B4H1
    Manufacturer IXYS / Littelfuse
    Voltage - Collector Emitter Breakdown (Max) 650 V
    Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 120A
    Test Condition 400V, 100A, 4.7Ohm, 15V
    Td (on/off) @ 25°C 54ns/270ns
    Switching Energy 5.75mJ (on), 2.67mJ (off)
    Supplier Device Package PLUS247™-3
    Series XPT™, GenX4™
    Reverse Recovery Time (trr) 105 ns
    Power - Max 1200 W
    Package / Case TO-247-3 Variant
    Package Tube
    Operating Temperature -55°C ~ 175°C (TJ)
    Mounting Type Through Hole
    Input Type Standard
    IGBT Type -
    Gate Charge 250 nC
    Current - Collector Pulsed (Icm) 840 A
    Current - Collector (Ic) (Max) 340 A
    Base Product Number IXXX140
  • TheIXXX140N65B4H1is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is IGBT and it falls under the category of Transistors - IGBTs - Single, with Manufacturer of IXYS / Littelfuse and Voltage - Collector Emitter Breakdown (Max) of 650 V and Vce(on) (Max) @ Vge, Ic of 1.9V @ 15V, 120A. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXXX140N65B4H1 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXXX140N65B4H1 IXXX200N60B3 IXXX160N65C4 IXXR110N65B4H1
Part Number IXXX140N65B4H1 IXXX200N60B3 IXXX160N65C4 IXXR110N65B4H1
Manufacturer IXYS IXYS IXYS IXYS
Base Product Number IXXX140 IXXX200 IXXX160 IXXR110
Switching Energy 5.75mJ (on), 2.67mJ (off) 2.85mJ (on), 4.4mJ (off) 3.5mJ (on), 1.3mJ (off) 2.2mJ (on), 1.05mJ (off)
Test Condition 400V, 100A, 4.7Ohm, 15V 360V, 100A, 1Ohm, 15V 400V, 80A, 1Ohm, 15V 400V, 55A, 2Ohm, 15V
IGBT Type - - PT PT
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Supplier Device Package PLUS247™-3 PLUS247™-3 PLUS247™-3 ISOPLUS247™
Current - Collector (Ic) (Max) 340 A 380 A 290 A 150 A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 120A 1.7V @ 15V, 100A 2.1V @ 15V, 160A 2.2V @ 15V, 110A
Current - Collector Pulsed (Icm) 840 A 900 A 800 A 460 A
Package Tube Tube Tube Tube
Series XPT™, GenX4™ XPT™, GenX3™ GenX4™, XPT™ GenX4™, XPT™
Reverse Recovery Time (trr) 105 ns 100 ns - 100 ns
Input Type Standard Standard Standard Standard
Td (on/off) @ 25°C 54ns/270ns 48ns/160ns 52ns/197ns 38ns/156ns
Package / Case TO-247-3 Variant TO-247-3 Variant TO-247-3 Variant TO-247-3
Gate Charge 250 nC 315 nC 422 nC 183 nC
Voltage - Collector Emitter Breakdown (Max) 650 V 600 V 650 V 650 V
Mounting Type Through Hole Through Hole Through Hole Through Hole
Power - Max 1200 W 1630 W 940 W 455 W
Payment Support The payment method can be chosen from the methods shown below: Wire Transfer (T/T, Bank Transfer), Western Union, Credit card, PayPal.
Certifications & Memberships We strictly controls the quality of products, environment and services.Through the ISO certification of the third party. View More >

Brand introduction

IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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