IXXX200N60B3 - Ixys-Electronics.com

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IXXX200N60B3IXYS IGBT: Part NumberIXXX200N60B3; PackageTO-247-3 Variant; ManufacturerIXYS / Littelfuse; RoHs Status; Manufacturer Part NumberIXYS-IXXX200N60B3; DescriptionIGBT; In stock28682; Data sheet
IXXX200N60B3.pdf

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In stock: 28682 pcs ~~Required fields are indicated by an asterisk ( * )~~

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Specifications
Product Details - IXXX200N60B3

IXXX200N60B3 Tech Specifications
IXYS - IXXX200N60B3 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXXX200N60B3

Manufacturer IXYS / Littelfuse

Voltage - Collector Emitter Breakdown (Max) 600 V

Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 100A

Test Condition 360V, 100A, 1Ohm, 15V

Td (on/off) @ 25°C 48ns/160ns

Switching Energy 2.85mJ (on), 4.4mJ (off)

Supplier Device Package PLUS247™-3

Series XPT™, GenX3™

Reverse Recovery Time (trr) 100 ns

Power - Max 1630 W

Package / Case TO-247-3 Variant

Package Tube

Operating Temperature -55°C ~ 175°C (TJ)

Mounting Type Through Hole

Input Type Standard

IGBT Type -

Gate Charge 315 nC

Current - Collector Pulsed (Icm) 900 A

Current - Collector (Ic) (Max) 380 A

Base Product Number IXXX200
TheIXXX200N60B3is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is IGBT and it falls under the category of Transistors - IGBTs - Single, with Manufacturer of IXYS / Littelfuse and Voltage - Collector Emitter Breakdown (Max) of 600 V and Vce(on) (Max) @ Vge, Ic of 1.7V @ 15V, 100A. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXXX200N60B3 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute
Part Number	IXXX200N60B3	IXXP12N65B4D1	IXXX160N65C4	IXXX100N60B3H1
Manufacturer	IXYS	IXYS	IXYS	IXYS
Vce(on) (Max) @ Vge, Ic	1.7V @ 15V, 100A	1.95V @ 15V, 12A	2.1V @ 15V, 160A	1.8V @ 15V, 70A
Power - Max	1630 W	160 W	940 W	695 W
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 150°C (TJ)
Series	XPT™, GenX3™	XPT™, GenX4™	GenX4™, XPT™	GenX3™, XPT™
Supplier Device Package	PLUS247™-3	TO-220-3	PLUS247™-3	PLUS247™-3
Package	Tube	Tube	Tube	Tube
Base Product Number	IXXX200	IXXP12	IXXX160	IXXX100
Gate Charge	315 nC	34 nC	422 nC	143 nC
Voltage - Collector Emitter Breakdown (Max)	600 V	650 V	650 V	600 V
Package / Case	TO-247-3 Variant	TO-220-3	TO-247-3 Variant	TO-247-3 Variant
Switching Energy	2.85mJ (on), 4.4mJ (off)	440µJ (on), 220µJ (off)	3.5mJ (on), 1.3mJ (off)	1.9mJ (on), 2mJ (off)
Current - Collector (Ic) (Max)	380 A	38 A	290 A	200 A
Td (on/off) @ 25°C	48ns/160ns	13ns/158ns	52ns/197ns	30ns/120ns
Test Condition	360V, 100A, 1Ohm, 15V	400V, 12A, 20Ohm, 15V	400V, 80A, 1Ohm, 15V	360V, 70A, 2Ohm, 15V
Reverse Recovery Time (trr)	100 ns	43 ns	-	140 ns
Current - Collector Pulsed (Icm)	900 A	70 A	800 A	440 A
Input Type	Standard	Standard	Standard	Standard
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
IGBT Type	-	-	PT	PT

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Brand introduction

IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

IXYS / Littelfuse

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