Name: IXYS MCB20P1200LB-TRR
Brand: IXYS
SKU: MCB20P1200LB-TRR
Availability: InStock

Specifications
Product Details - MCB20P1200LB-TRR

MCB20P1200LB-TRR Tech Specifications
IXYS - MCB20P1200LB-TRR technical specifications, attributes, parameters and parts with similar specifications to IXYS - MCB20P1200LB-TRR

Manufacturer IXYS / Littelfuse

Vgs(th) (Max) @ Id -

Technology Silicon Carbide (SiC)

Supplier Device Package 9-SMPD-B

Series MCB20P1200LB

Rds On (Max) @ Id, Vgs -

Power - Max -

Package / Case 9-PowerSMD

Package Tape & Reel (TR)

Operating Temperature -

Mounting Type Surface Mount

Input Capacitance (Ciss) (Max) @ Vds -

Gate Charge (Qg) (Max) @ Vgs -

FET Feature -

Drain to Source Voltage (Vdss) 1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C -

Configuration 4 N-Channel (Half Bridge)

Base Product Number MCB20P1200
TheMCB20P1200LB-TRRis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MCB20P1200LB-TRR and it falls under the category of Transistors - FETs, MOSFETs - Arrays, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of - and Technology of Silicon Carbide (SiC). Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for MCB20P1200LB-TRR or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute
Part Number	MCB20P1200LB-TRR	GMM3X60-015X2-SMD	MCB30P1200LB-TRR	MCB40P1200LB
Manufacturer	IXYS	IXYS	IXYS	IXYS Corporation
Rds On (Max) @ Id, Vgs	-	24mOhm @ 38A, 10V	-	-
Configuration	4 N-Channel (Half Bridge)	6 N-Channel (3-Phase Bridge)	4 N-Channel (Half Bridge)	-
Series	MCB20P1200LB	-	MCB30P1200LB	CoolMOS™
Current - Continuous Drain (Id) @ 25°C	-	50A	-	58A
Technology	Silicon Carbide (SiC)	MOSFET (Metal Oxide)	Silicon Carbide (SiC)	-
Drain to Source Voltage (Vdss)	1200V (1.2kV)	150V	1200V (1.2kV)	1200V (1.2kV)
Package / Case	9-PowerSMD	ISOPLUS-DIL™	9-PowerSMD	9-SMD Power Module
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Gate Charge (Qg) (Max) @ Vgs	-	97nC @ 10V	-	-
Package	Tape & Reel (TR)	Tube	Tape & Reel (TR)	-
FET Feature	-	-	-	Silicon Carbide (SiC)
Input Capacitance (Ciss) (Max) @ Vds	-	5800pF @ 25V	-	-
Base Product Number	MCB20P1200	GMM3X60	MCB30P1200	-
Supplier Device Package	9-SMPD-B	ISOPLUS-DIL™	9-SMPD-B	SMPD
Vgs(th) (Max) @ Id	-	4.5V @ 1mA	-	-
Power - Max	-	-	-	-
Operating Temperature	-	-55°C ~ 175°C (TJ)	-	-

Recommended IXYS Parts

Brand introduction

IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

IXYS / Littelfuse

Ixys-Electronics.com

Product Comparison

Recommended IXYS Parts

Brand introduction

Shopping cart (0 Items)

Compare List (0 Items)

Feedback

Ixys-Electronics.com

Product Comparison

Related News

1,280×1,024 10µm-pitch read-out IC for infra-red imagers

New Yorker Electronics acquires Omni Pro Electronics

AVX puts base-metal electrode X7Rs into space

Recommended IXYS Parts

Brand introduction

Shopping cart (0 Items)

Compare List (0 Items)

Feedback