Name: IXYS MCB40P1200LB-TUB
Brand: IXYS
SKU: MCB40P1200LB-TUB
Price: 154.32 USD
Availability: InStock

Specifications
Product Details - MCB40P1200LB-TUB

MCB40P1200LB-TUB Tech Specifications
IXYS - MCB40P1200LB-TUB technical specifications, attributes, parameters and parts with similar specifications to IXYS - MCB40P1200LB-TUB

Manufacturer IXYS / Littelfuse

Vgs(th) (Max) @ Id -

Technology Silicon Carbide (SiC)

Supplier Device Package SMPD

Series -

Rds On (Max) @ Id, Vgs -

Power - Max -

Package / Case 9-SMD Power Module

Package Tube

Operating Temperature -

Mounting Type Surface Mount

Input Capacitance (Ciss) (Max) @ Vds -

Gate Charge (Qg) (Max) @ Vgs -

FET Feature -

Drain to Source Voltage (Vdss) 1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C 58A

Configuration 2 N-Channel (Dual) Common Source

Base Product Number MCB40P1200
TheMCB40P1200LB-TUBis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is POWER MOSFET and it falls under the category of Transistors - FETs, MOSFETs - Arrays, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of - and Technology of Silicon Carbide (SiC). Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for MCB40P1200LB-TUB or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute
Part Number	MCB40P1200LB-TUB	MTI85W100GC-SMD	GWM180-004X2-SL	GWM220-004P3-SL SAM
Manufacturer	IXYS	IXYS	IXYS	IXYS
Rds On (Max) @ Id, Vgs	-	4mOhm @ 80A, 10V	2.5mOhm @ 100A, 10V	-
Technology	Silicon Carbide (SiC)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
FET Feature	-	-	-	-
Operating Temperature	-	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)	1200V (1.2kV)	100V	40V	40V
Current - Continuous Drain (Id) @ 25°C	58A	120A (Tc)	180A	180A
Supplier Device Package	SMPD	ISOPLUS-DIL™	ISOPLUS-DIL™	ISOPLUS-DIL™
Power - Max	-	-	-	-
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package	Tube	Tube	Tube	Tube
Configuration	2 N-Channel (Dual) Common Source	6 N-Channel (3-Phase Bridge)	6 N-Channel (3-Phase Bridge)	6 N-Channel (3-Phase Bridge)
Gate Charge (Qg) (Max) @ Vgs	-	88nC @ 10V	110nC @ 10V	94nC @ 10V
Package / Case	9-SMD Power Module	17-SMD, Gull Wing	17-SMD, Flat Leads	17-SMD, Flat Leads
Input Capacitance (Ciss) (Max) @ Vds	-	-	-	-
Base Product Number	MCB40P1200	MTI85W100	GWM180	GWM220
Vgs(th) (Max) @ Id	-	3.5V @ 150µA	4.5V @ 1mA	4V @ 1mA
Series	-	-	-	-

Brand introduction

IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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