Name: IXYS MCB60P1200TLB-TRR
Brand: IXYS
SKU: MCB60P1200TLB-TRR
Availability: InStock

Specifications
Product Details - MCB60P1200TLB-TRR

MCB60P1200TLB-TRR Tech Specifications
IXYS - MCB60P1200TLB-TRR technical specifications, attributes, parameters and parts with similar specifications to IXYS - MCB60P1200TLB-TRR

Manufacturer IXYS / Littelfuse

Vgs(th) (Max) @ Id -

Technology Silicon Carbide (SiC)

Supplier Device Package 9-SMPD-B

Series -

Rds On (Max) @ Id, Vgs -

Power - Max -

Package / Case 9-PowerSMD

Package Tape & Reel (TR)

Operating Temperature -

Mounting Type Surface Mount

Input Capacitance (Ciss) (Max) @ Vds -

Gate Charge (Qg) (Max) @ Vgs -

FET Feature -

Drain to Source Voltage (Vdss) 1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C -

Configuration 4 N-Channel (Half Bridge)

Base Product Number MCB60P1200
TheMCB60P1200TLB-TRRis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MCB60P1200TLB-TRR and it falls under the category of Transistors - FETs, MOSFETs - Arrays, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of - and Technology of Silicon Carbide (SiC). Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for MCB60P1200TLB-TRR or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute
Part Number	MCB60P1200TLB-TRR	MTC120WX75GD-SMD	GWM120-0075X1-SMD	MCB40P1200LB
Manufacturer	IXYS	IXYS	IXYS	IXYS Corporation
Supplier Device Package	9-SMPD-B	ISOPLUS-DIL™	ISOPLUS-DIL™	SMPD
Drain to Source Voltage (Vdss)	1200V (1.2kV)	75V	75V	1200V (1.2kV)
Vgs(th) (Max) @ Id	-	4V @ 1mA	4V @ 1mA	-
Series	-	-	-	CoolMOS™
Rds On (Max) @ Id, Vgs	-	3.1mOhm @ 100A, 10V	4.9mOhm @ 60A, 10V	-
Gate Charge (Qg) (Max) @ Vgs	-	178nC @ 10V	115nC @ 10V	-
Configuration	4 N-Channel (Half Bridge)	6 N-Channel (3-Phase Bridge)	6 N-Channel (3-Phase Bridge)	-
Base Product Number	MCB60P1200	MTC120	GWM120	-
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Technology	Silicon Carbide (SiC)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	-
Package	Tape & Reel (TR)	Tube	Tube	-
Operating Temperature	-	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-
Package / Case	9-PowerSMD	ISOPLUS-DIL™	17-SMD, Gull Wing	9-SMD Power Module
Input Capacitance (Ciss) (Max) @ Vds	-	10500pF @ 25V	-	-
FET Feature	-	-	-	Silicon Carbide (SiC)
Current - Continuous Drain (Id) @ 25°C	-	180A (Tc)	110A	58A
Power - Max	-	-	-	-

Brand introduction

IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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