Name: IXYS MWI75-06A7T
Brand: IXYS
SKU: MWI75-06A7T
Availability: InStock

Specifications
Product Details - MWI75-06A7T

MWI75-06A7T Tech Specifications
IXYS - MWI75-06A7T technical specifications, attributes, parameters and parts with similar specifications to IXYS - MWI75-06A7T

Manufacturer IXYS / Littelfuse

Voltage - Collector Emitter Breakdown (Max) 600 V

Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 75A

Supplier Device Package E2

Series -

Power - Max 280 W

Package / Case E2

Package Box

Operating Temperature -40°C ~ 150°C (TJ)

NTC Thermistor Yes

Mounting Type Chassis Mount

Input Capacitance (Cies) @ Vce 3.2 nF @ 25 V

Input Standard

IGBT Type NPT

Current - Collector Cutoff (Max) 1.3 mA

Current - Collector (Ic) (Max) 90 A

Configuration Three Phase Inverter

Base Product Number MWI75
TheMWI75-06A7Tis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is IGBT MODULE 600V 90A 280W E2 and it falls under the category of Transistors - IGBTs - Modules, with Manufacturer of IXYS / Littelfuse and Voltage - Collector Emitter Breakdown (Max) of 600 V and Vce(on) (Max) @ Vge, Ic of 2.6V @ 15V, 75A. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for MWI75-06A7T or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute
Part Number	MWI75-06A7T	MWI50-12T7T	MWI50-12E6K	MWI60-12T6K
Manufacturer	IXYS	IXYS	IXYS	IXYS
Series	-	-	-	-
Package / Case	E2	E2	E1	E1
Operating Temperature	-40°C ~ 150°C (TJ)	-40°C ~ 125°C (TJ)	-40°C ~ 125°C (TJ)	-40°C ~ 125°C (TJ)
NTC Thermistor	Yes	Yes	Yes	Yes
Supplier Device Package	E2	E2	E1	E1
Current - Collector Cutoff (Max)	1.3 mA	4 mA	300 µA	500 µA
Base Product Number	MWI75	MWI50	MWI50	MWI60
Input Capacitance (Cies) @ Vce	3.2 nF @ 25 V	3.5 nF @ 25 V	2 nF @ 25 V	2.53 nF @ 25 V
Input	Standard	Standard	Standard	Standard
Voltage - Collector Emitter Breakdown (Max)	600 V	1200 V	1200 V	1200 V
Current - Collector (Ic) (Max)	90 A	80 A	51 A	58 A
Package	Box	Box	Box	Box
IGBT Type	NPT	Trench	-	Trench
Configuration	Three Phase Inverter	Three Phase Inverter	Three Phase Inverter	Three Phase Inverter
Mounting Type	Chassis Mount	Chassis Mount	Chassis Mount	Chassis Mount
Power - Max	280 W	270 W	210 W	200 W
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 75A	2.15V @ 15V, 50A	2.9V @ 15V, 35A	2.3V @ 15V, 35A

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IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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