Name: IXYS FDM100-0045SP
Brand: IXYS
SKU: FDM100-0045SP
Availability: InStock

Specifications
Product Details - FDM100-0045SP

FDM100-0045SP Tech Specifications
IXYS - FDM100-0045SP technical specifications, attributes, parameters and parts with similar specifications to IXYS - FDM100-0045SP

Manufacturer IXYS / Littelfuse

Vgs(th) (Max) @ Id 4V @ 1mA

Vgs (Max) ±20V

Technology MOSFET (Metal Oxide)

Supplier Device Package ISOPLUS i4-PAC™

Series -

Rds On (Max) @ Id, Vgs 7.2mOhm @ 80A, 10V

Power Dissipation (Max) -

Package / Case i4-Pac™-5

Package Tube

Operating Temperature -55°C ~ 175°C (TJ)

Mounting Type Through Hole

Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V

FET Type N-Channel

FET Feature -

Drive Voltage (Max Rds On, Min Rds On) 10V

Drain to Source Voltage (Vdss) 55 V

Current - Continuous Drain (Id) @ 25°C 100A (Tc)

Base Product Number FDM100
TheFDM100-0045SPis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 55V 100A I4PAC and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4V @ 1mA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for FDM100-0045SP or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute
Part Number	FDM100-0045SP	IXFB300N10P	IXFH7N100P	IXTP12N50PM
Manufacturer	IXYS	IXYS	IXYS	IXYS
Vgs(th) (Max) @ Id	4V @ 1mA	5V @ 8mA	6V @ 1mA	5.5V @ 250µA
Vgs (Max)	±20V	±20V	±30V	±30V
Power Dissipation (Max)	-	1500W (Tc)	300W (Tc)	50W (Tc)
Current - Continuous Drain (Id) @ 25°C	100A (Tc)	300A (Tc)	7A (Tc)	6A (Tc)
Drain to Source Voltage (Vdss)	55 V	100 V	1000 V	500 V
Gate Charge (Qg) (Max) @ Vgs	100 nC @ 10 V	279 nC @ 10 V	47 nC @ 10 V	29 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	10V	10V	10V	10V
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Package	Tube	Tube	Tube	Tube
Base Product Number	FDM100	IXFB300	IXFH7	IXTP12
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
FET Feature	-	-	-	-
Rds On (Max) @ Id, Vgs	7.2mOhm @ 80A, 10V	5.5mOhm @ 50A, 10V	1.9Ohm @ 3.5A, 10V	500mOhm @ 6A, 10V
Package / Case	i4-Pac™-5	TO-264-3, TO-264AA	TO-247-3	TO-220-3
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Supplier Device Package	ISOPLUS i4-PAC™	PLUS264™	TO-247 (IXTH)	TO-220-3
Series	-	HiPerFET™, Polar	HiPerFET™, Polar	Polar

Brand introduction

IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

IXYS / Littelfuse

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