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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTY1N100P
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IXTY1N100PIXYS MOSFET N-CH 1000V 1A TO252
Part NumberIXTY1N100P
PackageTO-252-3, DPak (2 Leads + Tab), SC-63
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTY1N100P
DescriptionMOSFET N-CH 1000V 1A TO252
In stock11086
Data sheet
IXTY1N100P.pdf
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  • Specifications
  • Product Details - IXTY1N100P
  • IXTY1N100P Tech Specifications
    IXYS - IXTY1N100P technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTY1N100P
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4.5V @ 50µA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-252AA
    Series Polar
    Rds On (Max) @ Id, Vgs 15Ohm @ 500mA, 10V
    Power Dissipation (Max) 50W (Tc)
    Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Surface Mount
    Input Capacitance (Ciss) (Max) @ Vds 331 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 15.5 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 1000 V
    Current - Continuous Drain (Id) @ 25°C 1A (Tc)
    Base Product Number IXTY1
  • TheIXTY1N100Pis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 1000V 1A TO252 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4.5V @ 50µA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTY1N100P or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTY1N100P IXTY14N60X2 IXTY15P15T IXTY1R4N120P-TRL
Part Number IXTY1N100P IXTY14N60X2 IXTY15P15T IXTY1R4N120P-TRL
Manufacturer IXYS IXYS IXYS IXYS
Rds On (Max) @ Id, Vgs 15Ohm @ 500mA, 10V 250mOhm @ 7A, 10V 240mOhm @ 7A, 10V 13Ohm @ 700mA, 10V
Drain to Source Voltage (Vdss) 1000 V 600 V 150 V 1200 V
FET Type N-Channel N-Channel P-Channel N-Channel
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 1A (Tc) 14A (Tc) 15A (Tc) 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Gate Charge (Qg) (Max) @ Vgs 15.5 nC @ 10 V 16.7 nC @ 10 V 48 nC @ 10 V 24.8 nC @ 10 V
Supplier Device Package TO-252AA TO-252AA TO-252AA TO-252AA
Power Dissipation (Max) 50W (Tc) 180W (Tc) 150W (Tc) 86W (Tc)
Series Polar Ultra X2 TrenchP™ Polar
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Package Tube Tube Tube Tape & Reel (TR)
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 100µA
Input Capacitance (Ciss) (Max) @ Vds 331 pF @ 25 V 740 pF @ 25 V 3650 pF @ 25 V 666 pF @ 25 V
Base Product Number IXTY1 IXTY14 IXTY15 IXTY1
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Vgs (Max) ±20V ±30V ±15V ±30V
FET Feature - - - -
  • IXYS Related Products
  • IXTY1N100P Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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