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IXXH110N65B4IXYS DISC IGBT XPT-GENX4 TO-247AD
Part NumberIXXH110N65B4
PackageTO-247-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXXH110N65B4
DescriptionDISC IGBT XPT-GENX4 TO-247AD
In stock1865
Data sheet
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  • Specifications
  • Product Details - IXXH110N65B4
  • IXXH110N65B4 Tech Specifications
    IXYS - IXXH110N65B4 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXXH110N65B4
    Manufacturer IXYS / Littelfuse
    Voltage - Collector Emitter Breakdown (Max) 650 V
    Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 110A
    Test Condition 400V, 55A, 2Ohm, 15V
    Td (on/off) @ 25°C 26ns/146ns
    Switching Energy 2.2mJ (on), 1.05mJ (off)
    Supplier Device Package TO-247 (IXTH)
    Series XPT™, GenX4™
    Reverse Recovery Time (trr) 40 ns
    Power - Max 880 W
    Package / Case TO-247-3
    Package Tube
    Operating Temperature -55°C ~ 175°C (TJ)
    Mounting Type Through Hole
    Input Type Standard
    IGBT Type PT
    Gate Charge 183 nC
    Current - Collector Pulsed (Icm) 570 A
    Current - Collector (Ic) (Max) 250 A
    Base Product Number IXXH110
  • TheIXXH110N65B4is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is DISC IGBT XPT-GENX4 TO-247AD and it falls under the category of Transistors - IGBTs - Single, with Manufacturer of IXYS / Littelfuse and Voltage - Collector Emitter Breakdown (Max) of 650 V and Vce(on) (Max) @ Vge, Ic of 2.1V @ 15V, 110A. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXXH110N65B4 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXXH110N65B4 IXXH100N60B3 IXXH150N60C3 IXXH50N60B3
Part Number IXXH110N65B4 IXXH100N60B3 IXXH150N60C3 IXXH50N60B3
Manufacturer IXYS IXYS IXYS IXYS
Power - Max 880 W 830 W 1360 W 600 W
Package / Case TO-247-3 TO-247-3 TO-247-2 TO-247-3
Current - Collector (Ic) (Max) 250 A 220 A 300 A 120 A
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package Tube Tube Tube Tube
Supplier Device Package TO-247 (IXTH) TO-247AD (IXXH) TO-247AD TO-247AD (IXXH)
Base Product Number IXXH110 IXXH100 IXXH150 IXXH50
Series XPT™, GenX4™ GenX3™, XPT™ GenX3™, XPT™ GenX3™, XPT™
IGBT Type PT PT PT PT
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -
Test Condition 400V, 55A, 2Ohm, 15V 360V, 70A, 2Ohm, 15V 400V, 75A, 2Ohm, 15V 360V, 36A, 5Ohm, 15V
Voltage - Collector Emitter Breakdown (Max) 650 V 600 V 600 V 600 V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 110A 1.8V @ 15V, 70A 2.5V @ 15V, 150A 1.8V @ 15V, 36A
Switching Energy 2.2mJ (on), 1.05mJ (off) 1.9mJ (on), 2mJ (off) 3.4mJ (on), 1.8mJ (off) 670µJ (on), 740µJ (off)
Gate Charge 183 nC 143 nC 200 nC 70 nC
Td (on/off) @ 25°C 26ns/146ns 30ns/120ns 34ns/120ns 27ns/100ns
Reverse Recovery Time (trr) 40 ns - - -
Current - Collector Pulsed (Icm) 570 A 480 A 150 A 200 A
Input Type Standard Standard Standard Standard
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  • IXXH110N65B4 Download Datasheets (0)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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