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IXXH40N65B4D1IXYS IGBT
Part NumberIXXH40N65B4D1
PackageTO-247-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXXH40N65B4D1
DescriptionIGBT
In stock3345
Data sheet
IXXH40N65B4D1.pdf
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  • Specifications
  • Product Details - IXXH40N65B4D1
  • IXXH40N65B4D1 Tech Specifications
    IXYS - IXXH40N65B4D1 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXXH40N65B4D1
    Manufacturer IXYS / Littelfuse
    Voltage - Collector Emitter Breakdown (Max) 650 V
    Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A
    Test Condition 400V, 40A, 5Ohm, 15V
    Td (on/off) @ 25°C 20ns/115ns
    Switching Energy 1.4mJ (on), 800µJ (off)
    Supplier Device Package TO-247 (IXTH)
    Series XPT™, GenX4™
    Reverse Recovery Time (trr) 60 ns
    Power - Max 455 W
    Package / Case TO-247-3
    Package Tube
    Operating Temperature -55°C ~ 175°C (TJ)
    Mounting Type Through Hole
    Input Type Standard
    IGBT Type -
    Gate Charge 66 nC
    Current - Collector Pulsed (Icm) 225 A
    Current - Collector (Ic) (Max) 115 A
    Base Product Number IXXH40
  • TheIXXH40N65B4D1is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is IGBT and it falls under the category of Transistors - IGBTs - Single, with Manufacturer of IXYS / Littelfuse and Voltage - Collector Emitter Breakdown (Max) of 650 V and Vce(on) (Max) @ Vge, Ic of 2V @ 15V, 40A. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXXH40N65B4D1 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXXH40N65B4D1 IXXH140N65C4 IXXH50N60B3 IXXH50N60C3D1
Part Number IXXH40N65B4D1 IXXH140N65C4 IXXH50N60B3 IXXH50N60C3D1
Manufacturer IXYS IXYS IXYS IXYS
Switching Energy 1.4mJ (on), 800µJ (off) 4.9mJ (on), 1.7mJ (off) 670µJ (on), 740µJ (off) 720µJ (on), 330µJ (off)
Gate Charge 66 nC 250 nC 70 nC 64 nC
IGBT Type - PT PT PT
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) - -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A 2.3V @ 15V, 120A 1.8V @ 15V, 36A 2.3V @ 15V, 36A
Test Condition 400V, 40A, 5Ohm, 15V 400V, 75A, 4.7Ohm, 15V 360V, 36A, 5Ohm, 15V 360V, 36A, 5Ohm, 15V
Power - Max 455 W 1200 W 600 W 600 W
Series XPT™, GenX4™ XPT™, GenX4™ GenX3™, XPT™ GenX3™, XPT™
Input Type Standard Standard Standard Standard
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH) TO-247AD (IXXH) TO-247AD (IXXH)
Package Tube Tube Tube Tube
Current - Collector (Ic) (Max) 115 A 320 A 120 A 100 A
Base Product Number IXXH40 - IXXH50 IXXH50
Reverse Recovery Time (trr) 60 ns 90 ns - 25 ns
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V 600 V 600 V
Current - Collector Pulsed (Icm) 225 A 730 A 200 A 200 A
Td (on/off) @ 25°C 20ns/115ns 43ns/240ns 27ns/100ns 24ns/62ns
  • IXYS Related Products
  • IXXH40N65B4D1 Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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