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IXTH10N100DIXYS MOSFET N-CH 1000V 10A TO247
Part NumberIXTH10N100D
PackageTO-247-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTH10N100D
DescriptionMOSFET N-CH 1000V 10A TO247
In stock1529
Data sheet
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  • Specifications
  • Product Details - IXTH10N100D
  • IXTH10N100D Tech Specifications
    IXYS - IXTH10N100D technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTH10N100D
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 3.5V @ 250µA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-247 (IXTH)
    Series Depletion
    Rds On (Max) @ Id, Vgs 1.4Ohm @ 10A, 10V
    Power Dissipation (Max) 400W (Tc)
    Package / Case TO-247-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
    FET Type N-Channel
    FET Feature Depletion Mode
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 1000 V
    Current - Continuous Drain (Id) @ 25°C 10A (Tc)
    Base Product Number IXTH10
  • TheIXTH10N100Dis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 1000V 10A TO247 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 3.5V @ 250µA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTH10N100D or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTH10N100D IXTF2N300P3 IXTH110N10L2 IXTH11P50
Part Number IXTH10N100D IXTF2N300P3 IXTH110N10L2 IXTH11P50
Manufacturer IXYS IXYS IXYS IXYS
Mounting Type Through Hole Through Hole Through Hole Through Hole
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 25 V 1890 pF @ 25 V 10500 pF @ 25 V 4700 pF @ 25 V
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Base Product Number IXTH10 IXTF2 IXTH110 IXTH11
Package Tube Tube Bulk Tube
Vgs (Max) ±30V ±20V ±20V ±20V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 1.6A (Tc) 110A (Tc) 11A (Tc)
Supplier Device Package TO-247 (IXTH) ISOPLUS i4-PAC™ TO-247 (IXTH) TO-247 (IXTH)
FET Feature Depletion Mode - - -
FET Type N-Channel N-Channel N-Channel P-Channel
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V 73 nC @ 10 V 260 nC @ 10 V 130 nC @ 10 V
Drain to Source Voltage (Vdss) 1000 V 3000 V 100 V 500 V
Package / Case TO-247-3 ISOPLUSi5-Pak™ TO-247-3 TO-247-3
Series Depletion Polar P3™ Linear L2™ -
Vgs(th) (Max) @ Id 3.5V @ 250µA 5V @ 250µA 4.5V @ 250µA 5V @ 250µA
Power Dissipation (Max) 400W (Tc) 160W (Tc) 600W (Tc) 300W (Tc)
Rds On (Max) @ Id, Vgs 1.4Ohm @ 10A, 10V 21Ohm @ 1A, 10V 18mOhm @ 500mA, 10V 750mOhm @ 5.5A, 10V
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Payment Support The payment method can be chosen from the methods shown below: Wire Transfer (T/T, Bank Transfer), Western Union, Credit card, PayPal.
Certifications & Memberships We strictly controls the quality of products, environment and services.Through the ISO certification of the third party. View More >

Brand introduction

IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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