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HomeProductsDiscrete Semiconductor ProductsTransistors - IGBTs - SingleIXBK75N170
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IXBK75N170IXYS IGBT 1700V 200A 1040W TO264
Part NumberIXBK75N170
PackageTO-264-3, TO-264AA
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXBK75N170
DescriptionIGBT 1700V 200A 1040W TO264
In stock26732
Data sheet
IXBK75N170.pdf
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  • Specifications
  • Product Details - IXBK75N170
  • IXBK75N170 Tech Specifications
    IXYS - IXBK75N170 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXBK75N170
    Manufacturer IXYS / Littelfuse
    Voltage - Collector Emitter Breakdown (Max) 1700 V
    Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 75A
    Test Condition -
    Td (on/off) @ 25°C -
    Switching Energy -
    Supplier Device Package TO-264AA
    Series BIMOSFET™
    Reverse Recovery Time (trr) 1.5 µs
    Power - Max 1040 W
    Package / Case TO-264-3, TO-264AA
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Type Standard
    IGBT Type -
    Gate Charge 350 nC
    Current - Collector Pulsed (Icm) 580 A
    Current - Collector (Ic) (Max) 200 A
    Base Product Number IXBK75
  • TheIXBK75N170is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is IGBT 1700V 200A 1040W TO264 and it falls under the category of Transistors - IGBTs - Single, with Manufacturer of IXYS / Littelfuse and Voltage - Collector Emitter Breakdown (Max) of 1700 V and Vce(on) (Max) @ Vge, Ic of 3.1V @ 15V, 75A. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXBK75N170 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXBK75N170 IXBL60N360 IXBH42N250 IXBL20N300C
Part Number IXBK75N170 IXBL60N360 IXBH42N250 IXBL20N300C
Manufacturer IXYS IXYS IXYS IXYS
Series BIMOSFET™ BIMOSFET™ BIMOSFET™ BIMOSFET™
IGBT Type - - - -
Gate Charge 350 nC 450 nC 200 nC 425 nC
Package Tube Tube Tube Tube
Power - Max 1040 W 417 W 500 W 417 W
Voltage - Collector Emitter Breakdown (Max) 1700 V 3600 V 2500 V 3000 V
Current - Collector (Ic) (Max) 200 A 92 A 104 A 50 A
Test Condition - 960V, 60A, 4.7Ohm, 15V 1250V, 42A, 20Ohm, 15V 1500V, 20A, 3Ohm, 15V
Reverse Recovery Time (trr) 1.5 µs 1.95 µs 1.7 µs 864 ns
Base Product Number IXBK75 IXBL60 IXBH42 IXBL20
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 75A 3.4V @ 15V, 60A 3V @ 15V, 42A 6V @ 15V, 20A
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Supplier Device Package TO-264AA ISOPLUSi5-Pak™ TO-247AD ISOPLUSi5-Pak™
Input Type Standard Standard Standard Standard
Mounting Type Through Hole Through Hole Through Hole Through Hole
Switching Energy - - - 23mJ (on), 2.6mJ (off)
Package / Case TO-264-3, TO-264AA ISOPLUSi5-Pak™ TO-247-3 ISOPLUSi5-Pak™
Td (on/off) @ 25°C - 50ns/340ns 72ns/445ns 33ns/370ns
Current - Collector Pulsed (Icm) 580 A 720 A 400 A 430 A
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  • IXBK75N170 Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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