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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFN27N80
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IXFN27N80IXYS MOSFET N-CH 800V 27A SOT-227B
Part NumberIXFN27N80
PackageSOT-227-4, miniBLOC
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFN27N80
DescriptionMOSFET N-CH 800V 27A SOT-227B
In stock24939
Data sheet
IXFN27N80.pdf
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  • Specifications
  • Product Details - IXFN27N80
  • IXFN27N80 Tech Specifications
    IXYS - IXFN27N80 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFN27N80
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4.5V @ 8mA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package SOT-227B
    Series HiPerFET™
    Rds On (Max) @ Id, Vgs 300mOhm @ 13.5A, 10V
    Power Dissipation (Max) 520W (Tc)
    Package / Case SOT-227-4, miniBLOC
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Chassis Mount
    Input Capacitance (Ciss) (Max) @ Vds 9740 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 400 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V, 15V
    Drain to Source Voltage (Vdss) 800 V
    Current - Continuous Drain (Id) @ 25°C 27A (Tc)
    Base Product Number IXFN27
  • TheIXFN27N80is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 800V 27A SOT-227B and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4.5V @ 8mA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFN27N80 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFN27N80 IXFN24N90Q IXFN300N20X3 IXFN32N100P
Part Number IXFN27N80 IXFN24N90Q IXFN300N20X3 IXFN32N100P
Manufacturer IXYS IXYS IXYS IXYS
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 800 V 900 V 200 V 1000 V
Supplier Device Package SOT-227B SOT-227B SOT-227B SOT-227B
FET Feature - - - -
Current - Continuous Drain (Id) @ 25°C 27A (Tc) 24A (Tc) 300A (Tc) 27A (Tc)
Power Dissipation (Max) 520W (Tc) 500W (Tc) 695W (Tc) 690W (Tc)
Series HiPerFET™ HiPerFET™, Q Class HiPerFET™, Ultra X3 HiPerFET™, Polar
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC
Drive Voltage (Max Rds On, Min Rds On) 10V, 15V - 10V 10V
FET Type N-Channel N-Channel N-Channel N-Channel
Rds On (Max) @ Id, Vgs 300mOhm @ 13.5A, 10V - 3.5mOhm @ 150A, 10V 320mOhm @ 16A, 10V
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Mounting Type Chassis Mount Chassis Mount Chassis Mount Chassis Mount
Base Product Number IXFN27 IXFN24 IXFN300 IXFN32
Gate Charge (Qg) (Max) @ Vgs 400 nC @ 10 V - 375 nC @ 10 V 225 nC @ 10 V
Package Tube Tube Tube Tube
Vgs (Max) ±20V - ±20V ±30V
Vgs(th) (Max) @ Id 4.5V @ 8mA - 4.5V @ 8mA 6.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 9740 pF @ 25 V - 23800 pF @ 25 V 14200 pF @ 25 V
  • IXYS Related Products
  • IXFN27N80 Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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