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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTP48N20TM
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IXTP48N20TMIXYS MOSFET N-CH 200V 48A TO220
Part NumberIXTP48N20TM
PackageTO-220-3 Full Pack, Isolated Tab
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTP48N20TM
DescriptionMOSFET N-CH 200V 48A TO220
In stock8420
Data sheet
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  • Specifications
  • Product Details - IXTP48N20TM
  • IXTP48N20TM Tech Specifications
    IXYS - IXTP48N20TM technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTP48N20TM
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4.5V @ 250µA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-220 Isolated Tab
    Series Trench
    Rds On (Max) @ Id, Vgs 50mOhm @ 24A, 10V
    Power Dissipation (Max) 250W (Tc)
    Package / Case TO-220-3 Full Pack, Isolated Tab
    Package Tube
    Operating Temperature -55°C ~ 175°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 3090 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 200 V
    Current - Continuous Drain (Id) @ 25°C 48A (Tc)
    Base Product Number IXTP48
  • TheIXTP48N20TMis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 200V 48A TO220 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4.5V @ 250µA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTP48N20TM or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTP48N20TM IXTP52P10P IXTP42N25P IXTP4N60P
Part Number IXTP48N20TM IXTP52P10P IXTP42N25P IXTP4N60P
Manufacturer IXYS IXYS IXYS IXYS
Base Product Number IXTP48 IXTP52 IXTP42 IXTP4
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package Tube Tube Tube Tube
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 5.5V @ 250µA 5.5V @ 100µA
FET Type N-Channel P-Channel N-Channel N-Channel
Power Dissipation (Max) 250W (Tc) 300W (Tc) 300W (Tc) 89W (Tc)
Drain to Source Voltage (Vdss) 200 V 100 V 250 V 600 V
Input Capacitance (Ciss) (Max) @ Vds 3090 pF @ 25 V 2845 pF @ 25 V 2300 pF @ 25 V 635 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 60 nC @ 10 V 70 nC @ 10 V 13 nC @ 10 V
Series Trench PolarP™ Polar PolarHV™
FET Feature - - - -
Package / Case TO-220-3 Full Pack, Isolated Tab TO-220-3 TO-220-3 TO-220-3
Rds On (Max) @ Id, Vgs 50mOhm @ 24A, 10V 50mOhm @ 52A, 10V 84mOhm @ 500mA, 10V 2Ohm @ 2A, 10V
Supplier Device Package TO-220 Isolated Tab TO-220-3 TO-220-3 TO-220-3
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 48A (Tc) 52A (Tc) 42A (Tc) 4A (Tc)
Vgs (Max) ±30V ±20V ±20V ±30V
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
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  • IXTP48N20TM Download Datasheets (0)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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