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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTQ60N20T
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IXTQ60N20TIXYS MOSFET N-CH 200V 60A TO3P
Part NumberIXTQ60N20T
PackageTO-3P-3, SC-65-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTQ60N20T
DescriptionMOSFET N-CH 200V 60A TO3P
In stock9386
Data sheet
IXTQ60N20T.pdf
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  • Specifications
  • Product Details - IXTQ60N20T
  • IXTQ60N20T Tech Specifications
    IXYS - IXTQ60N20T technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTQ60N20T
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5V @ 250µA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-3P
    Series Trench
    Rds On (Max) @ Id, Vgs 40mOhm @ 30A, 10V
    Power Dissipation (Max) 500W (Ta)
    Package / Case TO-3P-3, SC-65-3
    Package Tube
    Operating Temperature -55°C ~ 175°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 4530 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 73 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 200 V
    Current - Continuous Drain (Id) @ 25°C 60A (Tc)
    Base Product Number IXTQ60
  • TheIXTQ60N20Tis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 200V 60A TO3P and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5V @ 250µA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTQ60N20T or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTQ60N20T IXTQ50N20P IXTQ56N15T IXTQ64N25P
Part Number IXTQ60N20T IXTQ50N20P IXTQ56N15T IXTQ64N25P
Manufacturer IXYS IXYS IXYS IXYS
Input Capacitance (Ciss) (Max) @ Vds 4530 pF @ 25 V 2720 pF @ 25 V - 3450 pF @ 25 V
Base Product Number IXTQ60 IXTQ50 IXTQ56 IXTQ64
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA - 5V @ 250µA
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 50A (Tc) 56A (Tc) 64A (Tc)
Supplier Device Package TO-3P TO-3P TO-3P TO-3P
FET Type N-Channel N-Channel N-Channel N-Channel
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3
Drain to Source Voltage (Vdss) 200 V 200 V 150 V 250 V
Mounting Type Through Hole Through Hole Through Hole Through Hole
Vgs (Max) ±20V ±20V - ±20V
Power Dissipation (Max) 500W (Ta) 360W (Tc) - 400W (Tc)
Rds On (Max) @ Id, Vgs 40mOhm @ 30A, 10V 60mOhm @ 50A, 10V - 49mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On) 10V 10V - 10V
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
FET Feature - - - -
Series Trench Polar Trench Polar
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) - -55°C ~ 150°C (TJ)
Package Tube Tube Tube Tube
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 10 V 70 nC @ 10 V - 105 nC @ 10 V
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  • IXTQ60N20T Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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