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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTY01N80
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IXTY01N80IXYS MOSFET N-CH 800V 100MA TO252AA
Part NumberIXTY01N80
PackageTO-252-3, DPak (2 Leads + Tab), SC-63
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTY01N80
DescriptionMOSFET N-CH 800V 100MA TO252AA
In stock3073
Data sheet
IXTY01N80.pdf
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  • Specifications
  • Product Details - IXTY01N80
  • IXTY01N80 Tech Specifications
    IXYS - IXTY01N80 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTY01N80
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4.5V @ 25µA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-252AA
    Series -
    Rds On (Max) @ Id, Vgs 50Ohm @ 100mA, 10V
    Power Dissipation (Max) 25W (Tc)
    Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Surface Mount
    Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 800 V
    Current - Continuous Drain (Id) @ 25°C 100mA (Tc)
    Base Product Number IXTY01
  • TheIXTY01N80is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 800V 100MA TO252AA and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4.5V @ 25µA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTY01N80 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTY01N80 IXTY01N100D IXTY02N120P-TRL IXTY01N100
Part Number IXTY01N80 IXTY01N100D IXTY02N120P-TRL IXTY01N100
Manufacturer IXYS IXYS IXYS IXYS
Drain to Source Voltage (Vdss) 800 V 1000 V 1200 V 1000 V
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Power Dissipation (Max) 25W (Tc) 1.1W (Ta), 25W (Tc) 33W (Tc) 25W (Tc)
FET Type N-Channel N-Channel N-Channel N-Channel
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs 50Ohm @ 100mA, 10V 80Ohm @ 50mA, 0V 75Ohm @ 100mA, 10V 80Ohm @ 100mA, 10V
Package Tube Tube Tape & Reel (TR) Tube
Base Product Number IXTY01 IXTY01 IXTY02 IXTY01
Series - Depletion Polar -
Supplier Device Package TO-252AA TO-252AA TO-252AA TO-252AA
Vgs (Max) ±20V ±20V ±20V ±20V
Vgs(th) (Max) @ Id 4.5V @ 25µA 4.5V @ 25µA 4V @ 100µA 4.5V @ 25µA
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V 100 pF @ 25 V 104 pF @ 25 V 54 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V 0V 10V 10V
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V 5.8 nC @ 5 V 4.7 nC @ 10 V 6.9 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C 100mA (Tc) 400mA (Tc) 200mA (Tc) 100mA (Tc)
FET Feature - Depletion Mode - -
  • IXYS Related Products
  • IXTY01N80 Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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