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IXTY02N120PIXYS MOSFET N-CH 1200V 200MA TO252
Part NumberIXTY02N120P
PackageTO-252-3, DPak (2 Leads + Tab), SC-63
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTY02N120P
DescriptionMOSFET N-CH 1200V 200MA TO252
In stock24697
Data sheet
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  • Specifications
  • Product Details - IXTY02N120P
  • IXTY02N120P Tech Specifications
    IXYS - IXTY02N120P technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTY02N120P
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4V @ 100µA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-252AA
    Series Polar
    Rds On (Max) @ Id, Vgs 75Ohm @ 500mA, 10V
    Power Dissipation (Max) 33W (Tc)
    Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Surface Mount
    Input Capacitance (Ciss) (Max) @ Vds 104 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 4.7 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 1200 V
    Current - Continuous Drain (Id) @ 25°C 200mA (Tc)
    Base Product Number IXTY02
  • TheIXTY02N120Pis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 1200V 200MA TO252 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4V @ 100µA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTY02N120P or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTY02N120P IXTX6N200P3HV IXTY06N120P IXTY01N100-TRL
Part Number IXTY02N120P IXTX6N200P3HV IXTY06N120P IXTY01N100-TRL
Manufacturer IXYS IXYS IXYS IXYS
Gate Charge (Qg) (Max) @ Vgs 4.7 nC @ 10 V 143 nC @ 10 V - 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 104 pF @ 25 V 3700 pF @ 25 V - 54 pF @ 25 V
Package Tube Tube Tube Tape & Reel (TR)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-247-3 Variant TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25°C 200mA (Tc) 6A (Tc) 90A (Tc) 100mA (Tc)
Supplier Device Package TO-252AA TO-247PLUS-HV TO-252AA TO-252AA
Power Dissipation (Max) 33W (Tc) 960W (Tc) - 25W (Tc)
FET Type N-Channel N-Channel N-Channel N-Channel
Vgs (Max) ±20V ±20V - ±20V
Base Product Number IXTY02 IXTX6 - IXTY01
Drive Voltage (Max Rds On, Min Rds On) 10V 10V - 10V
Rds On (Max) @ Id, Vgs 75Ohm @ 500mA, 10V 4Ohm @ 3A, 10V - 80Ohm @ 50mA, 10V
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id 4V @ 100µA 5V @ 250µA - 4.5V @ 25µA
FET Feature - - - -
Series Polar Polar P3™ - -
Drain to Source Voltage (Vdss) 1200 V 2000 V 1200 V 1000 V
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Through Hole Surface Mount Surface Mount
Payment Support The payment method can be chosen from the methods shown below: Wire Transfer (T/T, Bank Transfer), Western Union, Credit card, PayPal.
Certifications & Memberships We strictly controls the quality of products, environment and services.Through the ISO certification of the third party. View More >

Brand introduction

IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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