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IXTP3N110IXYS MOSFET N-CH 1100V 3A TO220AB
Part NumberIXTP3N110
PackageTO-220-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTP3N110
DescriptionMOSFET N-CH 1100V 3A TO220AB
In stock4259
Data sheet
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  • Specifications
  • Product Details - IXTP3N110
  • IXTP3N110 Tech Specifications
    IXYS - IXTP3N110 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTP3N110
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5V @ 250µA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-220-3
    Series -
    Rds On (Max) @ Id, Vgs 4Ohm @ 1.5A, 10V
    Power Dissipation (Max) 150W (Tc)
    Package / Case TO-220-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 1100 V
    Current - Continuous Drain (Id) @ 25°C 3A (Tc)
    Base Product Number IXTP3
  • TheIXTP3N110is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 1100V 3A TO220AB and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5V @ 250µA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTP3N110 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTP3N110 IXTP3N100P IXTP42N15T IXTP38N15T
Part Number IXTP3N110 IXTP3N100P IXTP42N15T IXTP38N15T
Manufacturer IXYS IXYS IXYS IXYS
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3
FET Feature - - - -
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V -
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 3A (Tc) 42A (Tc) 38A (Tc)
Rds On (Max) @ Id, Vgs 4Ohm @ 1.5A, 10V 4.8Ohm @ 1.5A, 10V 45mOhm @ 500mA, 10V -
Drain to Source Voltage (Vdss) 1100 V 1000 V 150 V 150 V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 25 V 1100 pF @ 25 V 1880 pF @ 25 V -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V 39 nC @ 10 V 21 nC @ 10 V -
Vgs(th) (Max) @ Id 5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA -
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3
Series - Polar P3™ Trench Trench
FET Type N-Channel N-Channel N-Channel N-Channel
Power Dissipation (Max) 150W (Tc) 125W (Tc) 200W (Tc) -
Package Tube Tube Tube Tube
Vgs (Max) ±20V ±20V ±30V -
Base Product Number IXTP3 IXTP3 IXTP42 IXTP38
Payment Support The payment method can be chosen from the methods shown below: Wire Transfer (T/T, Bank Transfer), Western Union, Credit card, PayPal.
Certifications & Memberships We strictly controls the quality of products, environment and services.Through the ISO certification of the third party. View More >

Brand introduction

IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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